MJE5740_15 datasheet(2/6 Pages) ONSEMI

Part #	MJE5740

Description	NPN Silicon Power Darlington Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE5740, MJE5742

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage

MJE5740

(IC = 50 mA, IB = 0)

MJE5742

VCEO(sus)

300

400

−

Vdc

Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

−

1

5

mAdc

Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)

IEBO

−

75

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 6

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 7

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)

(IC = 4 Adc, VCE = 5 Vdc)

hFE

50

200

100

400

−

Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)

Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)

VCE(sat)

−

2

3

2.2

Vdc

Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)

Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)

VBE(sat)

−

2.5

3.5

2.4

Vdc

Diode Forward Voltage (Note 3) (IF = 5 Adc)

Vf

−

2.5

Vdc

SWITCHING CHARACTERISTICS

Typical Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25 ms,

Duty Cycle

v 1%)

td

−

0.04

−

ms

Rise Time

tr

−

0.5

−

ms

Storage Time

ts

−

8

−

ms

Fall Time

tf

−

2

−

ms

Inductive Load, Clamped (Table 1)

Voltage Storage Time

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

tsv

−

4

−

ms

Crossover Time

tc

−

2

−

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width 300

ms, Duty Cycle = 2%.

3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

ORDERING INFORMATION

Device

Package

Shipping

MJE5740G

TO−220

(Pb−Free)

50 Units / Rail

MJE5742G

TO−220

(Pb−Free)

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