SP8M6FRA datasheet(3/8 Pages) ROHM

Part #	SP8M6FRA

Description	4V Drive NchPch MOSFET

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Manufacturer	ROHM [Rohm]

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SP8M6

Transistors

Rev.C

3/5

P-ch

zElectrical characteristics (Ta=25qC)

Parameter

Symbol

IGSS

Yfs

Min.

−

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−±10

μA

−30

−−

V

−−

−1

μA

−1.0

−−2.5

V

−

65

90

−

100

140

m

Ω

−

120

165

1.8

−−

S

−

490

−

pF

−

110

75

−

pF

−

10

−

pF

−

15

−

ns

−

35

−

ns

−

10

−

ns

−

5.5

−

ns

−

1.5

−

nC

−

2.0

−

nC

−−

nC

VGS

= ±20V, VDS=0V

VDD

−15V

ID

= −1mA, VGS=0V

VDS

= −30V, VGS=0V

VDS

= −10V, ID= −1mA

ID

= −3.5A, VGS= −10V

ID

= −1.75A, VGS= −4.5V

ID

= −1.75A, VGS= −4.0V

ID

= −1.75A, VDS= −10V

VDS

= −10V

VGS

=0V

f

=1MHz

VGS

= −10V

RL

=8.57Ω

RG

=10Ω

VGS

= −5V

ID

= −3.5A

ID

= −1.75A, VDD −15V

z

zBody diode characteristics (Source-Drain) (Ta=25qC)

VSD

−−

−1.2

V

IS

= −1.0A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

SP8M6FRA

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