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SP3130-01WTG Datasheet(PDF) 2 Page - Littelfuse |
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SP3130-01WTG Datasheet(HTML) 2 Page - Littelfuse |
2 / 5 page ©2016 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA®Diodes) Revision: 08/04/16 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3130 Series CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units I PP Peak Current (t p=8/20μs) 2.0 A T OP Operating Temperature -40 to 125 °C T STOR Storage Temperature -55 to 150 °C Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (T OP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 28 V Reverse Leakage Current I LEAK V R=28V with 1pin at GND 10 50 nA Clamp Voltage1 V C I PP=1A, tp=8/20µs, Fwd 39 44 V I PP=2A, tp=8/20µs, Fwd 42 48 V ESD Withstand Voltage1 V ESD IEC61000-4-2 (Contact) ±10 kV IEC61000-4-2 (Air) ±15 kV Dynamic Resistance2 R DYN TLP, t P=100ns, I/O to GND 1.0 Ω Diode Capacitance1 C I/O-I/O Reverse Bias=0V, f=1 MHz 0.3 0.45 pF Note: 1. Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20μS Pulse Waveform 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% 0.05.0 10.015.020.025.030.0 Time ( s) Capacitance vs. Reverse Bias 0 0.1 0.2 0.3 0.4 0.5 04 81216202428 Bias Voltage (V) |
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