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M58LW064D Datasheet(PDF) 1 Page - STMicroelectronics |
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M58LW064D Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 50 page 1/50 September 2004 M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOLTAGE –VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME – Random Read 110ns – Page Mode Read 110/25ns ■ PROGRAMMING TIME – 16 Word Write Buffer – 12µs Word effective programming time ■ 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ■ ENHANCED SECURITY – Block Protection/ Unprotection –VPEN signal for Program Erase Enable – 128 bit Protection Register with 64 bit Unique Code in OTP area ■ PROGRAM and ERASE SUSPEND ■ COMMON FLASH INTERFACE ■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK ■ ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW064D: 0017h ■ PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Packages TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm TBGA |
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