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NSBC123JDP6T5G Datasheet(PDF) 3 Page - ON Semiconductor |
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NSBC123JDP6T5G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA =25°C, common for Q1 and Q2, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB =50V, IE =0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE =50V, IB =0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC =0) IEBO − − 0.2 mAdc Collector-Base Breakdown Voltage (IC =10 mA, IE =0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 6) (IC = 2.0 mA, IB =0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 6) (IC = 5.0 mA, VCE =10V) hFE 80 140 − Collector-Emitter Saturation Voltage (Note 6) (IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 V Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.6 − Vdc Input Voltage (On) (VCE = 0.2 V, IC = 5.0 mA) Vi(on) − 0.8 − Vdc Output Voltage (On) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (Off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 1.5 2.2 2.9 kW Resistor Ratio R1/R2 0.038 0.047 0.056 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. Figure 1. Derating Curve AMBIENT TEMPERATURE (°C) 125 100 75 50 25 0 −25 −50 0 50 100 150 200 250 300 150 (1) (2) (1) SOT−363; 1.0 × 1.0 Inch Pad (2) SOT−563; Minimum Pad (3) SOT−963; 100 mm2, 1 oz. Copper Trace 350 400 (3) |
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