NSBC114EPDXV6T1G datasheet(3/10 Pages) ONSEMI

Part #	NSBC114EPDXV6T1G

Description	Complementary Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6

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ELECTRICAL CHARACTERISTICS (TA =25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB =50V, IE =0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current

(VCE =50V, IB =0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC =0)

IEBO

−

0.5

mAdc

Collector-Base Breakdown Voltage

(IC =10 mA, IE =0)

V(BR)CBO

50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 6)

(IC = 2.0 mA, IB =0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 6)

(IC = 5.0 mA, VCE =10V)

hFE

35

60

−

Collector-Emitter Saturation Voltage (Note 6)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

0.25

V

Input Voltage (Off)

(VCE = 5.0 V, IC = 100 mA) (NPN)

(VCE = 5.0 V, IC = 100 mA) (PNP)

Vi(off)

−

1.2

−

Vdc

Input Voltage (On)

(VCE = 0.2 V, IC = 10 mA) (NPN)

(VCE = 0.2 V, IC = 10 mA) (PNP)

Vi(on)

−

2.0

2.2

−

Vdc

Output Voltage (On)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (Off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

7.0

10

13

k

W

Resistor Ratio

R1/R2

0.8

1.0

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle

≤ 2%.

Figure 1. Derating Curve

AMBIENT TEMPERATURE (

°C)

125

100

75

50

25

0

−25

−50

0

50

100

150

200

250

300

150

(1) (2)

(1) SOT−363; 1.0

× 1.0 Inch Pad

(2) SOT−563; Minimum Pad

(3) SOT−963; 100 mm2, 1 oz. Copper Trace

350

400

(3)

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NSBC114EPDXV6T1G Datasheet(PDF) 3 Page - ON Semiconductor

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