MTB04N03Q8-0-T3-G datasheet(5/9 Pages) CYSTEKEC

Part #	MTB04N03Q8-0-T3-G

Description	N-Channel Logic Level Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : C789Q8

Issued Date : 2011.12.16

Revised Date : 2015.10.05

Page No. : 5/9

MTB04N03Q8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

100

1000

10000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.8

1

1.2

1.4

1.6

1.8

2

-60

-20

20

60

100

140

Tj, Junction Temperature(°C)

ID=250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0

10

2030

4050

60

Qg, Total Gate Charge(nC)

VDS=15V

ID=18A

Maximum Safe Operating Area

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

VDS, Drain-Source Voltage(V)

DC

10ms

100ms

1ms

100

μs

10

μs

RDS(ON)

Limit

TA=25°C, Tj(max)=150°C

VGS=10V, RθJA=50°C/W

Single Pulse

Maximum Drain Current vs Case Temperature

0

5

10

15

20

25

30

25

50

75

100

125

150

175

TC, Case Temperature(°C)

VGS=10V, Tj(max)=150°C

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MTB04N03Q8-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

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