RTF025N03

Transistors

Rev.A

2/2

Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−

Typ. Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

∗Pulsed

−

10

30

−−

−

−

1

0.5

−

1.5

V

−

48

67

−

50

70

mΩ

mΩ

mΩ

−

70

98

2

−−

−

270

−

pF

−

70

40

−

pF

−

8

−

pF

f=1MHz

−

15

−

ns

−

27

−

ns

−

11

−

ns

−

3.7

−

ns

−

0.7

5.2

nC

−

1.2

−

nC

−−

nC

Body diode characteristics (Source-drain) (Ta=25°C)

−−

1.2

V

Forward voltage

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

RTF025N03FRA