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IRLI3705N Datasheet(PDF) 2 Page - International Rectifier |
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IRLI3705N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLI3705N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.010 VGS = 10V, ID = 28A ––– ––– 0.012 Ω VGS = 5.0V, ID = 28A ––– ––– 0.018 VGS = 4.0V, ID = 24A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 50 ––– ––– S VDS = 25V, ID = 46A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 98 ID = 46A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 49 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 140 ––– ns ID = 46A td(off) Turn-Off Delay Time ––– 37 ––– RG = 1.8Ω, VGS = 5.0V tf Fall Time ––– 78 ––– RD = 0.59 Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3600 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance nH pF S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 46A Qrr Reverse RecoveryCharge ––– 290 440 nC di/dt = 100A/µs S D G A 52 310 Source-Drain Ratings and Characteristics Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) V DD = 25V, starting TJ = 25°C, L = 320µH RG = 25Ω, IAS = 46A. (See Figure 12) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Uses IRL3705N data and test conditions ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
t=60s, ƒ=60Hz |
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