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DS1135LZ1220 Datasheet(PDF) 5 Page - Dallas Semiconductor |
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DS1135LZ1220 Datasheet(HTML) 5 Page - Dallas Semiconductor |
5 / 6 page DS1135-L 5 of 6 TEST CONDITIONS Ambient Temperature: 25 °C ± 3°C Supply Voltage (VCC ): 3.3V ± 0.1V Input Pulse: High: 3.0V ± 0.1V Low: 0.0V ± 0.1V Source Impedance: 50 W Max. Rise and Fall Time: 3.0ns Max. — Measured between 0.6V and 2.4V. Pulse Width: 500ns Pulse Period: 1 ms Output Load Capacitance: 15pF Output: Each output is loaded with the equivalent of one 74F04 input gate. Data is measured at the 1.5V level on the rising and falling edges. Note: The above conditions are for test only and do not restrict the devices under other data sheet conditions. TIMING DIAGRAM NOTES: 1. All voltages are referenced to ground. 2. Power-up time is the time from the application of power to the time stable delays are being produced at the output. tFALL 80% tRISE 20% IN OUT 1.5V 1.5V tWI tWI PERIOD 1.5V 1.5V 1.5V tPLH tPHL tOF tOR |
Similar Part No. - DS1135LZ1220 |
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Similar Description - DS1135LZ1220 |
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