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IDT70121S Datasheet(PDF) 9 Page - Integrated Device Technology

Part # IDT70121S
Description  HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
Download  16 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT70121S Datasheet(HTML) 9 Page - Integrated Device Technology

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IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Industrial and Commercial Temperature Ranges
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a CE = VIL and a R/W = VIL
3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be
placed on the bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short
as the specified tWP.
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
R/
W
tWC
tHZ
tAW
tHZ
tAS
tWP
DATAOUT
tDW
tDH
tOW
OE
ADDRESS
DATAIN
CE
tWZ
(4)
(4)
tWR
2654 drw 07
(3)
(7)
(2)
(6)
(7)
(7)
CE
tWC
tAS
tWR
tDW
tDH
ADDRESS
DATAIN
R/
W
tAW
tEW
2654 drw 08
(6)
(2)
(3)


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