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2SD1959 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1959 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  isc Product Specification isc website： www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1959 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 650 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.1 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 30 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 9.5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 200 pF tf Fall Time IC= 6A; IB1= IB2= 1.2A; 1.0 μ s |
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