SMUN5312DW1T1G datasheet(4/10 Pages) ONSEMI

Part #	SMUN5312DW1T1G

Description	Complementary Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6

www.onsemi.com

4

TYPICAL CHARACTERISTICS − NPN TRANSISTOR

MUN5312DW1, NSBC124EPDXV6

Figure 2. VCE(sat) vs. IC

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. Output Current vs. Input Voltage

Figure 6. Input Voltage vs. Output Current

50

0

10

203040

1.6

0.8

0

VR, REVERSE VOLTAGE (V)

f = 10 kHz

IE = 0 A

TA = 25°C

0.4

1.2

2.0

2.4

2.8

3.2

1

0.1

0.01

0.001

010

20

50

IC, COLLECTOR CURRENT (mA)

TA =-55°C

25

°C

150

°C

IC/IB = 10

30

40

1000

100

1

10

100

IC, COLLECTOR CURRENT (mA)

TA =150°C

25

°C

-55

°C

VCE = 10 V

10

150

°C

25

°C

TA =-55°C

100

10

1

0.1

0.01

0.001

01

2

3

4

Vin, INPUT VOLTAGE (V)

56

7

8

9

10

VO = 5 V

10

020

30

IC, COLLECTOR CURRENT (mA)

10

1

0.1

TA =-55°C

150

°C

25

°C

40

50

VO = 0.2 V

100

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SMUN5312DW1T1G Datasheet(PDF) 4 Page - ON Semiconductor

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