CJ3139KDW datasheet(1/5 Pages) JIANGSU

Part #	CJ3139KDW

Description	Dual P-Channel Power MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate MOSFETS

CJ3139KDW Dual P-Channel Power MOSFET

GENERRAL DESCRIPTION

This Dual P-Channel MOSFET has been designed using advanced

Power Trench process to optimize the RDS(ON).

Including two P-ch CJ3139K MOSFET (independently) in a package.

FEATURE

High-Side Switching

Low On-Resistance

Low Threshold

Fast Switching Speed

APPLICATION

Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source voltage

VDSS

-20

VGS

±12

V

Drain Current-Continuous

ID(DC)

-0.66

Drain Current -Pulsed(note1)

IDM(pulse)

-2.64

A

Power Dissipation (note 2)

PD

150

mW

Thermal Resistance from Junction to Ambient

RθJA

833

℃/W

Storage Temperature

Tj

150

Junction Temperature

Tstg

-55 ~+150

℃

SOT-363

www.cj-elec.com

1

E,Mar,2016

MARKING

Equivalent Circuit

1

6

2

S1

D1

G1

3

4

5

D2

S2

G2

V(BR)DSS

RDS(on)MAX

ID

9

P #9

$

P #9

95P

#

189

（

TYP）

Typical Gate-Source Voltage

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CJ3139KDW Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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