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7005L15PFGB Datasheet(PDF) 5 Page - Integrated Device Technology

Part No. 7005L15PFGB
Description  HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
Download  21 Pages
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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7005L15PFGB Datasheet(HTML) 5 Page - Integrated Device Technology

 
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6.42
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the 0perating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
Data Retention Waveform
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. TA = +25°C, VCC = 2V, and are not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by characterization, but is not production tested.
DATA RETENTION MODE
VCC
CE
2738 drw 05
4.5V
tCDR
tR
VIH
VDR
VIH
4.5V
VDR
2V
>
Symbol
Parameter
Test Conditions
7005S
7005L
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5µA
|ILO|
Output Leakage Current
CE
= VIH, VOUT = 0V to VCC
___
10
___
5µA
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2738 tbl 08
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
VDR
VCC for Data Retention
VCC = 2V
2.0
___
___
V
ICCDR
Data Retention Current
CE
> VHC
VIN > VHC or < VLC
Mil. & Ind.
___
100
4000
µA
Com'l.
___
100
1500
tCDR(3)
Chip Deselect to Data Retention Time
SEM
> VHC
0
___
___
ns
tR(3)
Operation Recovery Time
tRC(2)
___
___
ns
2738 tbl 09


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