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LM387 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM387 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 4 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage LM387 a 30V LM387A a 40V Power Dissipation (Note 1) 15W Operating Temperature Range 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 260 C Electrical Characteristics TA e 25 C VCC e 14V unless otherwise stated Parameter Conditions Min Typ Max Units Voltage Gain Open Loop f e 100 Hz 160000 VV Supply Current LM387 VCC 9V–30V RL e % 10 mA LM387A VCC 9V–40V RL e % 10 mA Input Resistance Positive Input 50 100 kX Negative Input 200 kX Input Current 05 31 m A Negative Input Output Resistance Open Loop 150 X Output Current Source 8 mA Sink 2 mA Output Voltage Swing Peak-to-Peak VCCb2V Unity Gain Bandwidth 15 MHz Large Signal Frequency 20 Vp-p (VCC l 24V) 75 kHz Response THD s 1% Maximum Input Voltage Linear Operation 300 mVrms Supply Rejection Ratio f e 1 kHz 110 dB Input Referred Channel Separation f e 1 kHz 40 60 dB Total Harmonic Distortion 60 dB Gain f e 1 kHz 01 05 % Total Equivalent Input 10 Hz – 10000 Hz 10 12 m Vrms Noise (Flat Gain Cricuit) LM387 Figure 1 Output Noise NAB Tape Unweighted 400 700 m Vrms Playback Circuit Gain of 37 dB LM387A Figure 2 Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 80 CW junction to ambient Typical Applications (Continued) Two-Pole Fast Turn-ON NAB Tape Preamplifier TLH7845 – 5 Frequency Response of NAB Circuit of Figure 2 TLH7845 – 6 2 |
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