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2N2222AU Datasheet(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

Part No. 2N2222AU
Description  PNP Silicon Epitaxial Planar Transistor
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Maker  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Homepage  http://www.semtech.net.cn
Logo SEMTECH_ELEC - SEMTECH ELECTRONICS LTD.

2N2222AU Datasheet(HTML) 1 Page - SEMTECH ELECTRONICS LTD.

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Dated18/01/2016
Rev03
®
SEMTECH ELECTRONICS LTD.
2N2222AU
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
75
V
Collector Emitter Voltage
VCEO
40
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
- 55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 150 mA
at VCE = 10 V, IC = 500 mA
hFE
hFE
hFE
hFE
hFE
35
50
75
100
40
-
-
-
300
-
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 60 V
ICBO
-
10
nA
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
75
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
40
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
6
-
V
Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
0.3
1
V
Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
VBE(sat)
0.6
-
1.2
2
V
Gain Bandwidth Product
at IC = 20 mA, VCE = 20 V, f = 100 MHz
fT
250
-
MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
8
pF


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