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FJP3305 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FJP3305
Description  High Voltage Switch Mode Application
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FJP3305 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300µs, Duty Cycle≤2%
hFE Classification
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500µA, IE=0
700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
9
V
ICBO
Collector Cut-off Current
VCB=700V, IE=0
1
µA
IEBO
Emitter Cut-off Current
VEB=9V, IC=0
1
µA
hFE1
hFE2
*
DC Current Gain
VCE=5V, IC=1A
19
35
VCE=5V, IC=2A
8
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC=1A, IB=0.2A
0.5
V
IC=2A, IB=0.5A
0.6
V
IC=4A, IB=1A
1
V
VBE(sat)
Base-Emitter On Voltage
IC=1A, IB=0.2A
1.2
V
IC=2A, IB=0.5A
1.6
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
4
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
65
pF
tON
Turn On Time
VCC=125V,
IC=2A=5IB1=-5IB2
RL=62.5Ω
0.8
µs
tSTG
Storage Time
4
µs
tF
Fall Time
0.9
µs
Classification
R
O
hFE2
19 ~ 28
26 ~ 35
FJP3305
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast and Switching Regulator
1.Base
2.Collector
3.Emitter
1
TO-220


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