Item

Conditions

Drain Current

Transconductance

Gate-Source Leakage Current

Gate-Drain Capacitance

Symbol

IDSS

IGSO

CGD

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

mA

nA

mS

pF

Unit

gm

Pinch-off Voltage

Vp

V

Gate-Source Capacitance

pF

CGS

Limits

85

20

-

Max.

15

-2.0

-0.2

45

-

-

FHX35X/002

FHX35LG/002

-

-

-

Min.

40

-1.0

60

0.27

--

0.47

10

0.035

Min.

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Symbol

Tstg

VDS

6

-5

290

-65 to 175

mW

°C

V

V

VGS

PT

Channel Temperature

+175

°C

Tch

Thermal Resistance

150

Channel to Case

°C/W

Rth

Ratings

Conditions

Unit

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

VGS=-2V

VDS=3V

IDS=10mA

VDS=3V, IDS=10mA

VDS=2V, VGS=0V

VDS=2V, IDS=10mA

VDS=2V, IDS=1mA

DESCRIPTION

The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT

(High Electron Mobility Transistor) ones suitable for use as the front end

of an optical receiver in high speed lightwave communication systems.

This HEMT combines high transconductance, low gate capacitance and

low leakage current; all important factors in achieving low noise

preamplification. Fujitsu’s stringent Quality Assurance criteria and

detailed Test Procedures assure Highest Reliabiltity Performance.

FEATURES

• High Transconductance

• Low Leakage Current

• Low Gate Capacitance

• Gold Bonding System

• Proven Reliability

1

Edition 1.1

May 1998

FHX35X/002

FHX35LG/002

Low Noise HEMT

LG PACKAGE