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NLSX4378FCT1G Datasheet(PDF) 5 Page - ON Semiconductor |
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NLSX4378FCT1G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page NLSX4378 http://onsemi.com 5 TIMING CHARACTERISTICS − RAIL−TO−RAIL DRIVING CONFIGURATIONS (I/O test circuit of Figures 2 and 3, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW) Symbol Unit −405C to +855C (Note 3) Test Conditions Parameter Symbol Unit Max Typ Min Test Conditions Parameter VL = 3.6 V, VCC = 2.5 V tRVCC I/O VCC Risetime 15 ns tFVCC I/O VCC Falltime 10 ns tRVL I/O VL Risetime 15 ns tFVL I/O VL Falltime 15 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 15 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 15 ns tPPSKEW Part−to−Part Skew 5 nS MDR Maximum Data Rate 24 Mb/s VL = 5.5 V, VCC = 1.65 V tRVCC I/O VCC Risetime 30 ns tFVCC I/O VCC Falltime 10 ns tRVL I/O VL Risetime 15 ns tFVL I/O VL Falltime 20 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 20 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 20 ns tPPSKEW Part−to−Part Skew 5 nS MDR Maximum Data Rate 24 Mb/s 3. All units are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design. TIMING CHARACTERISTICS − OPEN DRAIN DRIVING CONFIGURATIONS (I/O test circuit of Figures 4 and 5, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW) Symbol Parameter Test Conditions −405C to +855C (Note 4) Unit Min Typ Max +1.65 v VL, VCC v +5.5 V tRVCC I/O VCC Risetime 400 ns tFVCC I/O VCC Falltime 50 ns tRVL I/O VL Risetime 400 ns tFVL I/O VL Falltime 60 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 1000 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 1000 ns tPPSKEW Part−to−Part Skew 50 nS MDR Maximum Data Rate 2 Mb/s 4. All units are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design. Limits over the operating temperature range are guaranteed by design. |
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