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RA55H3340M-101 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RA55H3340M-101 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 9 page  <Silicon RF Power Modules > RA55H3340M RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO Publication Date : Oct.2011 3 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 0 10 20 30 40 50 60 70 80 320 330 340 350 360 370 380 390 400 410 FREQUENCY f(MHz) 0 10 20 30 40 50 60 70 80 VDD=12.5V VGG=5V Pin=50mW Pout ηT ρ in 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 4 8 12 16 20 24 f=330MHz, VDD=12.5V, VGG=5V Pout IDD Gp 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 4 8 12 16 20 24 f=365MHz, VDD=12.5V, VGG=5V Pout Gp IDD -80 -70 -60 -50 -40 -30 320 330 340 350 360 370 380 390 400 410 FREQUENCY f(MHz) VDD=12.5V VGG=5V Pin=50mW 2 nd 3 rd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 4 8 12 16 20 24 f=400MHz, VDD=12.5V, VGG=5V Pout Gp IDD OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 0 10 20 30 40 50 60 70 80 90 100 110 120 2 4 6 8 10 12 14 16 DRAIN VOLTAGE VDD(V) 0 2 4 6 8 10 12 14 16 18 20 22 24 Pout f=330MHz, VGG=5V, Pin=50mW IDD 0 10 20 30 40 50 60 70 80 90 100 110 120 2 4 6 8 10 12 14 16 DRAIN VOLTAGE VDD(V) 0 2 4 6 8 10 12 14 16 18 20 22 24 Pout f=365MHz, VGG=5V, Pin=50mW IDD |
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Similar Description - RA55H3340M-101 |
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