RA07M1317M-101 datasheet(4/9 Pages) MITSUBISHI

Part #	RA07M1317M-101

Description	Broadband Frequency Range

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 9 page

Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA07M1317M

30 Jun 2010

4/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus GATE VOLTAGE

0

2

4

6

8

10

12

14

3

4

56

78

9

10

DRAIN VOLTAGE VDD (V)

0

1

2

3

4

5

6

7

P

out

f=135MHz

V

GG=3.5V

P

in=20m W

I DD

0

1

2

3

4

5

6

7

8

9

10

1.5

2

2.5

3

3.5

4

GATE VOLTAGE VGG (V)

0

1

2

3

4

5

P

out

f=135MHz

V

DD=7.2V

P

in=20m W

I DD

0

2

4

6

8

10

12

14

3

4

56

78

9

10

DRAIN VOLTAGE VDD (V)

0

1

2

3

4

5

6

7

P

out

f=165MHz

V

GG=3.5V

P

in=20m W

I DD

0

2

4

6

8

10

12

14

3

4

56

78

9

10

DRAIN VOLTAGE VDD (V)

0

1

2

3

4

5

6

7

P

out

f=175MHz

V

GG=3.5V

P

in=20m W

I DD

0

1

2

3

4

5

6

7

8

9

10

1.52

2.53

3.54

GATE VOLTAGE VGG (V)

0

1

2

3

4

5

P

out

f=165MHz

V

DD=7.2V

P

in=20m W

I DD

0

1

2

3

4

5

6

7

8

9

10

1.5

2

2.5

3

3.5

4

GATE VOLTAGE VGG (V)

0

1

2

3

4

5

P

out

f=175MHz

V

DD=7.2V

P

in=20m W

I DD

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