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RSD200N05FRA Datasheet(PDF) 1 Page - Rohm |
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RSD200N05FRA Datasheet(HTML) 1 Page - Rohm |
1 / 9 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch MOSFET RSD200N05 z zStructure z Dimensions (Unit : mm) Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. zApplication Switching zPackaging specifications z Inner circuit Package Taping Code TL Basic ordering unit (pieces) 2500 RSD200N05 { z Absolute maximum ratings (Ta = 25qC) Symbol Limits Unit Drain-source voltage VDSS 45 V Gate-source voltage VGSS r20 V Continuous ID r20 A PulsedIDP r40 A Continuous IS 16 A PulsedISP 40 A Power dissipation PD 20 W Channel temperature Tch 150 qC Range of storage temperature Tstg 55 to 150 qC *1 Pw 10 Ps, Duty cycle 1% *2 Tc=25qC zThermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 6.25 qC / W * Tc=25qC Parameter Type Source current (Body Diode) Drain current Parameter *1 *1 * CPT3 (SC-63) <SOT-428> 6.5 2.3 (2) (3) 0.65 (1) 0.75 2.3 0.9 5.1 2.3 0.5 1.0 0.5 *1 *2 (1) Gate (2) Drain (3) Source 1 ESD PROTECTION DIODE 2 BODY DIODE ∗2 ∗1 (1) (2) (3) 1/6 2011.08 - Rev.A AEC-Q101 Qualified FRA FRA 2016.06 |
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