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RRR040P03FRA Datasheet(PDF) 2 Page - Rohm

Part No. RRR040P03FRA
Description  Pch -30V -4A Power MOSFET
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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RRR040P03FRA Datasheet(HTML) 2 Page - Rohm

 
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRR040P03
*1 Limited only by maximum temperature allowed.
*2 Pw
d 10Ps, Duty cycle d 1%
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
zThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
RthJA
*4
-
-
231
°C/W
Thermal resistance, junction - ambient
RthJA
*3
-
-
125
°C/W
zElectrical characteristics (T
a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID =
1mA
referenced to 25°C
-
25
-
mV/°C
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID =
1mA
30
-
-
PA
Gate - Source leakage current
IGSS
VGS =
r20V, V
DS = 0V
-
-
r10
PA
Zero gate voltage drain current
IDSS
VDS =
30V, V
GS = 0V
-
-
1
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID =
1mA
referenced to 25°C
-
3.9
-
mV/°C
Gate threshold voltage
VGS (th)
VDS =
10V, I
D =
1mA
1
-
2.5
Static drain - source
on - state resistance
RDS(on)
*5
VGS=
10V, I
D=
4A
-
32
45
-
47
66
m
:
VGS=
4.5V, I
D=
2A
-
45
63
VGS=
4.0V, I
D=
2A
-
52
72
VGS=
10V, I
D=
4A, T
j=125°C
:
Transconductance
gfs
*5
VDS =
10V, I
D =
4A
2.7
7.2
-
S
Gate input resistannce
RG
f = 1MHz, open drain
-
13
-
2/11
2012.05 - Rev.B
FRA
2016.06 - Rev.B


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