GaAs HEMT

CFH120

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Infineon Technologies AG

page 1/20

Wireless Solutions

Rev. 3.0/January 11

WS TI DS 12

Preliminary Datasheet

Features

• low noise pseudomorphic HEMT

with high associated gain

• low cost plastic package

• for low noise front end amplifiers

up to 20 GHz

• For DBS down converters

• Fully RF tested at 12 GHz

ESD:

Electrostatic discharge sensitive device,

observe handling precautions!

1 = source

2 = drain

3 = source

4 = gate

Type

Marking

Ordering Code (taped)

Package

CFH120-06

H5s

Q62705-K0671

MW-4

CFH120-08

H3s

Q62705-K0603

MW-4

CFH120-10

H4s

Q62705-K0604

MW-4

Maximum Ratings

Characteristics

Symbol

Max. Value

Unit

Drain-source voltage

VDS

3.0

V

Drain-gate voltage

VDG

4.0

V

Gate-source voltage

VGS

-2.0

V

Drain current

ID

40

mA

Channel temperature

TCh

150

°C

Operating temperature

Top

-30 ... +85

°C

Storage temperature range

Tstg

-65 ... +150

°C

Ptot

180

mW

Thermal resistance

Channel-soldering point source

RthChS

690

K/W