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CJQ4503 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # CJQ4503
Description  N-and P-Channel Enhancement Mode Power MOSFET
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

CJQ4503 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
VGS=0, ID =250µA
N-Ch
30
Drain-source breakdown voltage
V(BR)DSS
VGS=0, ID =-250µA
P-Ch
-30
V
VDS =VGS, ID =250µA
N-Ch
1
1.5
3
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
P-Ch
-1
-1.7
-3
V
N-Ch
Gate-body leakage
IGSS
VDS =0V, VGS =±20V
P-Ch
±100
nA
VDS =30V, VGS =0V
N-Ch
1
Zero gate voltage drain current
IDSS
VDS =-30V, VGS =0V
P-Ch
-1
µA
VGS =10V, ID =6A
N-Ch
10
28
VGS =-10V, ID =-6A
P-Ch
16
36
VGS =4.5V, ID =4A
N-Ch
14
42
Drain-source on-resistance
c
RDS(on
)
VGS =-4.5V, ID =-4A
P-Ch
25
55
mΩ
VDS =10V, ID =6A
N-Ch
Forward transconductance
gfs
VDS =-10V, ID =-6A
P-Ch
4
S
IS=1.7A,VGS=0V
N-Ch
1.2
Diode forward voltage
c
VSD
IS=-1.7A,VGS=0V
P-Ch
-1.2
V
Dynamic
N-Ch
13.5
Total gate chargec
Qg
P-Ch
20
N-Ch
1.4
Gate-source charged
Qgs
P-Ch
2
N-Ch
4.7
Gate-drain charged
Qgd
N-Channel
VDS =24V,VGS =4.5V,ID =6A
P-Channel
VDS =-24V,VGS =-4.5V,ID =-6A
P-Ch
7
nC
N-Ch
5
Turn-on delay timec
td(on)
P-Ch
8
N-Ch
8
Rise timed
tr
P-Ch
7
N-Ch
18.5
Turn-off delay timed
td(off)
P-Ch
34
N-Ch
9
Fall timed
tf
N-Channel
VDS=20V,RD=20Ω, ID=1A,
VGS=10V,RG=3.3Ω
P-Channel
VDS=-15V,RD=15Ω, ID=-1A,
VGS=-10V,RG=3.3Ω
P-Ch
26
ns
N-Ch
770
Input Capacitanced
Ciss
P-Ch
1380
N-Ch
80
Output Capacitanced
Coss
P-Ch
150
N-Ch
75
Reverse Transfer Capacitanced
Crss
N-Channel
VDS =25V,VGS =0V,f =1MHz
P-Channel
VDS =-25V,VGS =0V,f =1MHz
P-Ch
140
pF
Notes :
c.
Pulse Test : Pulse width≤300µs, duty cycle 2%.
d.
Guaranteed by design, not subject to production testing.
www.cj-elec.com
2
G,Mar,2016
a
T =25
unless otherwise specified


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