3

ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test

requirements. Circuit losses have been de-embedded from actual measurements.

Input

50 Ohm

Transmission

Line Including

Gate Bias T

(0.5 dB loss)

Input

Matching Circuit

Γ_mag = 0.66

Γ_ang = 5°

(0.4 dB loss)

DUT

50 Ohm

Transmission

Line Including

Drain Bias T

(0.5 dB loss)

Output

ATF-35143 Electrical Specifications

T

Symbol

Parameters and Test Conditions

Units

Min.

Max.

Saturated Drain Current

mA

40

65

80

Pinchoff Voltage

V

-0.65

-0.5

-0.35

Quiescent Bias Current

mA

—

15

—

Transconductance

mmho

90

120

—

Gate to Drain Leakage Current

µA

250

Gate Leakage Current

µA

—

10

150

f = 2 GHz

dB

0.4

0.7

NF

0.5

0.9

f = 900 MHz

dB

0.3

0.4

f = 2 GHz

dB

16.5

18

19.5

14

16

18

f = 900 MHz

dB

20

18

f = 2 GHz

dBm

19

21

OIP3

14

f = 900 MHz

dBm

19

14

1 dB Compressed

dBm

10

8

dBm

9

9

Notes:

1. Guaranteed at wafer probe level

2. Typical value determined from a sample size of 450 parts from 9 wafers.

3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.

4. Measurements obtained using production test board described in Figure 5.