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K9K1208U0M-YCB0 Datasheet(PDF) 7 Page - Samsung semiconductor |
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K9K1208U0M-YCB0 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 26 page K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY 7 VALID BLOCK NOTE : 1. The K9K1208U0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits . Do not try to access these invalid blocks for program and erase. Refer to the attached technical notes for a appropriate management of invalid blocks. 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block Parameter Symbol Min Typ. Max Unit Valid Block Number NVB 4,026 - 4,096 Blocks Program/Erase Characteristics Parameter Symbol Min Typ Max Unit Program Time tPROG - 200 500 µs Number of Partial Program Cycles in the Same Page Main Array Nop - - 2 cycles Spare Array - - 3 cycles Block Erase Time tBERS - 2 3 ms CAPACITANCE(TA=25 °C, VCC=3.3V, f=1.0MHz) NOTE : Capacitance is periodically sampled and not 100% tested. Item Symbol Test Condition Min Max Unit Input/Output Capacitance CI/O VIL=0V - 30 pF Input Capacitance CIN VIN=0V - 30 pF AC TEST CONDITION (K9K1208U0M-YCB0 :TA=0 to 70 °C, K9K1208U0M-YIB0:TA=-40 to 85°C, VCC=2.7V~3.6V unless otherwise) Parameter Value Input Pulse Levels 0.4V to 2.4V Input Rise and Fall Times 5ns Input and Output Timing Levels 1.5V Output Load (3.0V +/-10%) 1 TTL GATE and CL=50pF Output Load (3.3V +/-10%) 1 TTL GATE and CL=100pF MODE SELECTION NOTE : 1. X can be VIL or VIH. 2. WP should be biased to CMOS high or CMOS low for standby. 3. When GND input is high, spare area is deselected. CLE ALE CE WE RE GND WP Mode H L L H X X Read Mode Command Input L H L H X X Address Input(4clock) H L L H X H Write Mode Command Input L H L H X H Address Input(4clock) L L L H L/H(3) H Data Input L L L H L/H(3) X Sequential Read & Data Output L L L H H L/H(3) X During Read(Busy) X X X X X L/H(3) H During Program(Busy) X X X X X X H During Erase(Busy) X X(1) X X X X L Write Protect X X H X X 0V/VCC(2) 0V/VCC(2) Stand-by |
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