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LM35 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM35
Description  Precision Centigrade Temperature Sensors
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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Electrical Characteristics
(Notes 1, 6)
LM35
LM35C, LM35D
Parameter
Conditions
Tested
Design
Tested
Design
Units
Typical
Limit
Limit
Typical
Limit
Limit
(Max.)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Accuracy,
T
A=+25˚C
±0.4
±1.0
±0.4
±1.0
˚C
LM35, LM35C
T
A=−10˚C
±0.5
±0.5
±1.5
˚C
(Note 7)
T
A=TMAX
±0.8
±1.5
±0.8
±1.5
˚C
T
A=TMIN
±0.8
±1.5
±0.8
±2.0
˚C
Accuracy, LM35D
(Note 7)
T
A=+25˚C
±0.6
±1.5
˚C
T
A=TMAX
±0.9
±2.0
˚C
T
A=TMIN
±0.9
±2.0
˚C
Nonlinearity
T
MIN≤TA≤TMAX
±0.3
±0.5
±0.2
±0.5
˚C
(Note 8)
Sensor Gain
T
MIN≤TA≤TMAX
+10.0
+9.8,
+10.0
+9.8,
mV/˚C
(Average Slope)
+10.2
+10.2
Load Regulation
T
A=+25˚C
±0.4
±2.0
±0.4
±2.0
mV/mA
(Note 3) 0
≤I
L≤1mA
T
MIN≤TA≤TMAX
±0.5
±5.0
±0.5
±5.0
mV/mA
Line Regulation
T
A=+25˚C
±0.01
±0.1
±0.01
±0.1
mV/V
(Note 3)
4V
≤V
S≤30V
±0.02
±0.2
±0.02
±0.2
mV/V
Quiescent Current
V
S=+5V, +25˚C
56
80
56
80
µA
(Note 9)
V
S=+5V
105
158
91
138
µA
V
S=+30V, +25˚C
56.2
82
56.2
82
µA
V
S=+30V
105.5
161
91.5
141
µA
Change of
4V
≤V
S≤30V, +25˚C
0.2
2.0
0.2
2.0
µA
Quiescent Current
4V
≤V
S≤30V
0.5
3.0
0.5
3.0
µA
(Note 3)
Temperature
+0.39
+0.7
+0.39
+0.7
µA/˚C
Coefficient of
Quiescent Current
Minimum Temperature
In circuit of
+1.5
+2.0
+1.5
+2.0
˚C
for Rated Accuracy
Figure 1,I
L=0
Long Term Stability
T
J=TMAX, for
±0.08
±0.08
˚C
1000 hours
Note 1: Unless otherwise noted, these specifications apply: −55˚C
≤TJ≤+150˚C for the LM35 and LM35A; −40˚≤TJ≤+110˚C for the LM35C and LM35CA; and
≤TJ≤+100˚C for the LM35D. VS=+5Vdc and ILOAD=50 µA, in the circuit of Figure 2. These specifications also apply from +2˚C to TMAX in the circuit of Figure 1.
Specifications in boldface apply over the full rated temperature range.
Note 2: Thermal resistance of the TO-46 package is 400˚C/W, junction to ambient, and 24˚C/W junction to case. Thermal resistance of the TO-92 package is
180˚C/W junction to ambient. Thermal resistance of the small outline molded package is 220˚C/W junction to ambient. Thermal resistance of the TO-220 package
is 90˚C/W junction to ambient. For additional thermal resistance information see table in the Applications section.
Note 3: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be
computed by multiplying the internal dissipation by the thermal resistance.
Note 4: Tested Limits are guaranteed and 100% tested in production.
Note 5: Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to
calculate outgoing quality levels.
Note 6: Specifications in boldface apply over the full rated temperature range.
Note 7: Accuracy is defined as the error between the output voltage and 10mv/˚C times the device’s case temperature, at specified conditions of voltage, current,
and temperature (expressed in ˚C).
Note 8: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device’s rated temperature
range.
Note 9: Quiescent current is defined in the circuit of
Figure 1.
Note 10: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond its rated operating conditions. See Note 1.
Note 11: Human body model, 100 pF discharged through a 1.5 k
Ω resistor.
Note 12: See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” or the section titled “Surface Mount” found in a current National
Semiconductor Linear Data Book for other methods of soldering surface mount devices.
www.national.com
4




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