74AUC1G00GV datasheet(5/12 Pages) PHILIPS

Part #	74AUC1G00GV

Description	Single 2-input NAND gate

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

2002 Nov 12

5

Philips Semiconductors

Preliminary speciﬁcation

Single 2-input NAND gate

74AUC1G00

DC CHARACTERISTICS

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Note

1. All typical values are at VCC = 1.8 V and Tamb =25 °C.

SYMBOL

PARAMETER

TEST CONDITIONS

Tamb (°C)

UNIT

OTHER

VCC (V)

−40 to +85

MIN.

TYP.(1)

MAX.

VIH

HIGH-level input

voltage

0.8

VCC

−−

V

1.1 to 2.3

0.65

× VCC −−

V

2.3 to 2.7

1.7

−−

V

VIL

LOW-level input

voltage

0.8

−−

GND

V

1.1 to 2.3

−−

0.35

× VCC V

2.3 to 2.7

−−

0.7

V

VOH

HIGH-level output

voltage

VI =VIH or VIL; IO = −100 µA 0.8 to 2.7

VCC − 0.1

−−

V

VI =VIH or VIL; IO =− 700 µA 0.8

−

0.55

−

V

VI =VIH or VIL; IO =− 3 mA

1.1

VCC − 0.3

−−

V

VI =VIH or VIL; IO = −5 mA

1.5

VCC − 0.4

−−

V

VI =VIH or VIL; IO = −8 mA

1.65

VCC − 0.45 −−

V

VI =VIH or VIL; IO = −9 mA

2.3

1.8

−−

V

VOL

LOW-level output

voltage

VI =VIH or VIL; IO = 100 µA

0.8 to 2.7

−−

0.2

V

VI =VIH or VIL; IO = 700 µA

0.8

−

0.25

−

V

VI =VIH or VIL; IO = 3 mA

1.1

−−

0.3

V

VI =VIH or VIL; IO = 5 mA

1.5

−−

0.4

V

VI =VIH or VIL; IO = 8 mA

1.65

−−

0.45

V

VI =VIH or VIL; IO = 9 mA

2.3

−−

0.6

V

II

input leakage

current

VI =VCC or GND

0 to 2.7

−±0.1

±5

µA

Ioff

power OFF

leakage current

VI or VO = 2.7 V

0

−±0.1

±10

µA

ICC

quiescent supply

current

VI =VCC or GND; IO = 0

0.8 to 2.7

−

0.1

10

µA

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