74AHC3GU04DP datasheet(1/17 Pages) PHILIPS

Part #	74AHC3GU04DP

Description	high-speed Si-gate CMOS device

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

General description

The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the

inverting single stage function.

2.

Features

s Symmetrical output impedance

s High noise immunity

s ESD protection:

x HBM EIA/JESD22-A114-A exceeds 2000 V

x MM EIA/JESD22-A115-A exceeds 200 V

x CDM EIA/JESD22-C101 exceeds 1000 V.

s Low power dissipation

s Balanced propagation delays

s SOT505-2 and SOT765-1 package

s Output capability

±8 mA drive

s Speciﬁed from

−40 °Cto+85 °C and from −40 °C to +125 °C.

3.

Quick reference data

[1]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

Σ(C

L × VCC

2

× f

o) = sum of the outputs.

[2]

The condition is VI = GND to VCC.

74AHC3GU04

Inverter

Rev. 01 — 5 March 2004

Product data sheet

Table 1:

Quick reference data

GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tPHL, tPLH

propagation delay nA to nY VCC =5V;

CL =15pF

-

2.5

5.5

ns

CI

input capacitance

-

3.0

10

pF

CPD

power dissipation

capacitance

[1]

[2]

-4

-pF

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