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61LV25616AL Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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61LV25616AL Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
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5 / 12 page 
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5 Rev. A 02/21/03 1 2 3 4 5 6 7 8 9 10 11 12 IS61LV25616AL ISSI® CAPACITANCE(1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF COUT Input/Output Capacitance VOUT = 0V 8 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -10 -12 Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC VDD Dynamic Operating VDD = Max., Com. — 100 — 90 mA Supply Current IOUT = 0 mA, f = fMAX Ind. — 110 — 100 ISB TTL Standby Current VDD = Max., Com. — 50 — 45 mA (TTL Inputs) VIN = VIH or VIL Ind. — 55 — 50 CE ≥ VIH, f = fMAX. ISB1 TTL Standby Current VDD = Max., Com. — 20 — 20 mA (TTL Inputs) VIN = VIH or VIL Ind. — 25 — 25 CE ≥ VIH, f = 0 ISB2 CMOS Standby VDD = Max., Com. — 15 — 15 mA Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 20 — 20 VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product in development |
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