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CJU80N03 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJU80N03 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 5 page TO-252-2L 1. GATE 2. DRAIN 3. SOURCE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU80N03 N-Channel Power MOSFET DESCRIPTION The CJU80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply MARKING EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current IDM 320 A Single Pulsed Avalanche Energy EAS (1) 306 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ (1).EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A, Mar,2016 V(BR)DSS RDS(on)MAX ID 30V 6.5m 80A Ω@10V 10mΩ@ 5V CJU80N03= Device code Solid dot = Green molding compound device, XXX if none, the normal device =Date Code |
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