CJU80N03 datasheet(1/5 Pages) JIANGSU

Part #	CJU80N03

Description	N-Channel Power MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO-252-2L

1. GATE

2. DRAIN

3. SOURCE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU80N03

N-Channel Power MOSFET

DESCRIPTION

The CJU80N03 uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be used in a

wide variety of applications.

FEATURES

High density cell design for ultra low

RDS(ON)

Fully characterized Avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

Uninterruptible Power Supply

MARKING

EQUIVALENT CIRCUIT

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

80

A

Pulsed Drain Current

IDM

320

A

Single Pulsed Avalanche Energy

EAS

(1)

306

mJ

Power Dissipation

PD

1.25

W

Thermal Resistance from Junction to Ambient

RθJA

100

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature Range

Tstg

-55 ~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

TL

260

℃

(1).EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C

www.cj-elec.com

1

A,

Mar,2016

V(BR)DSS

RDS(on)MAX

ID

30V

6.5m

80A

Ω@10V

10mΩ@ 5V

CJU80N03= Device code

Solid dot = Green molding compound device,

XXX

if none, the normal device

=Date Code

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CJU80N03 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

CJU80N03 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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