EMH4 datasheet(1/3 Pages) JIANGSU

Part #	EMH4

Description	Dual Digital Transistors (NPNNPN)

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

EMH4

FEATURES

Two DTC114T chips in a package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

MARKING: H4

Absolute maximum ratings (Ta=25

℃)

Parameter

Symbol

Limits

Unit

Collector-base

voltage

V(BR)CBO

50

V

Collector-emitter voltage

V(BR)CEO

50

V

Emitter-base

voltage

V(BR)EBO

5

V

Collector current

IC

100

mA

Collector Power dissipation

PC

150

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150

Electrical characteristics (Ta=25

℃)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

V(BR)CBO

50

V

IC=50μA

Collector-emitter breakdown voltage

V(BR)CEO

50

V

IC=1mA

Emitter-base breakdown voltage

V(BR)EBO

5

V

IE=50μA

Collector cut-off current

ICBO

0.5

μAVCB=50V

Emitter cut-off current

IEBO

0.5

μAVEB=4V

Collector-emitter saturation voltage

VCE(sat)

0.3

V

IC=10mA,IB=1mA

DC current transfer ratio

hFE

100

600

VCE=5V,IC=1mA

Input resistance

R1

7

10

13

KΩ

Transition frequency

fT

250

MHz

VCE=10V ,IE=-5mA,f=100MHz

℃

SOT-563

www.cj-elec.com

1

C,Sep,2016

www.cj-elec.com

JC T

Dual Digital Transistors (NPN+NPN)

Digital Transistors (Built-in Resistors)

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