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2SK3211 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK3211 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK3211 3 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 200 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS —— 10 µAV DS = 200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V R DS(on) —60 75 m Ω I D = 15 A, VGS = 10 V* 4 Static drain to source on state resistance R DS(on) —65 85 m Ω I D = 15 A, VGS = 4 V* 4 Forward transfer admittance |y fs|18 30 — S I D = 15 A, VDS = 10 V * 4 Input capacitance Ciss — 2420 — pF Output capacitance Coss — 790 — pF Reverse transfer capacitance Crss — 340 — pF V DS = 10 V V GS = 0 f = 1 MHz Turn-on delay time t d(on) —20 — ns Rise time t r — 230 — ns Turn-off delay time t d(off) — 590 — ns Fall time t f — 330 — ns I D = 15 A, VGS = 10 V R L = 2 Ω Body–drain diode forward voltage V DF — 0.95 — V I F = 25 A, VGS = 0 Body–drain diode reverse recovery time t rr — 230 — ns I F = 25 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
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