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2SK3162 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SK3162
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  9 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK3162 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SK3162
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
200
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)
Note1
80
A
Body-drain diode reverse drain current
I
DR
20
A
Avalanche current
I
AP
Note3
20
A
Avalanche energy
E
AR
Note3
26
mJ
Channel dissipation
Pch
Note2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
200
V
I
D = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16 V, VDS = 0
Zero gate voltege drain current
I
DSS
——10
µAV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
R
DS(on)
6075m
I
D = 10 A, VGS = 10 V
Note4
resistance
R
DS(on)
6585m
I
D = 10 A, VGS = 4 V
Note4
Forward transfer admittance
|y
fs|
1525—
S
I
D = 10 A, VDS = 10 V
Note4
Input capacitance
Ciss
2420
pF
V
DS = 10 V
Output capacitance
Coss
790
pF
V
GS = 0
Reverse transfer capacitance
Crss
340
pF
f = 1 MHz
Turn-on delay time
t
d(on)
20
ns
I
D = 10 A, VGS = 10 V
Rise time
t
r
150
ns
R
L = 3 Ω
Turn-off delay time
t
d(off)
630
ns
Fall time
t
f
290
ns
Body–drain diode forward voltage
V
DF
0.90
V
I
F = 20 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
210
ns
I
F = 20 A, VGS = 0
diF/ dt = 50 A/
µs
Note:
4. Pulse test


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