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2SC5729 Datasheet(PDF) 2 Page - Rohm

Part No. 2SC5729
Description  Medium power transistor (30V, 0.5A)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SC5729 Datasheet(HTML) 2 Page - Rohm

   
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2SC5729
Transistor
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
hFE
Cob
Ton
Min.
30
30
6
120
300
−−
5
40
1.0
1.0
150
300
390
V
IC=100
µA
IC
=1mA
IE
=100
µA
VCE
=2V, IC=50mA
VCB
=20V
VEB
=4V
IC
=100mA, IB=10mA
IC
=500mA
IB1
=50mA
IB2
=
−50mA
VCC~ 25V
VCE
=10V, IE=
−100mA, f=10MHz
VCB
=10V, IE=0A, f=1MHz
V
V
µA
µA
MHz
mV
pF
ns
Tstg
120
ns
Tf
50
ns
Typ.
Max.
Unit
Conditions
Collector
−base breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector
−emitter staturation voltage
Collector
−emitter breakdown voltage
Emitter
−base breakdown voltage
hFE RANK
QR
120-270
180-390
Electrical characteristic curves
Fig.1 Safe operating area
COLLECTOR EMITTER VOLTAGE : VCE (V)
Single non repoetitive pulse
DC
1ms
10ms
110
0.1
100
10
1
0.1
0.01
0.001
100ms
Fig.2 Switching Time
0.1
0.01
1
1000
100
10
COLLECTOR CURRENT : IC (A)
Ta
=25°C
VCC
=25V
IC/IB
=10/1
Tstg
Tf
Ton
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : IC (A)
0.001
0.01
0.1
1
10
100
1000
Ta
=125°C
Ta
=25°C
Ta
=−40°C
VCE
=2V
0.001
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (A)
VCE
=5V
VCE
=3V
VCE
=2V
Fig.4 DC current gain vs. collector
current
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
1
Fig.5 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
Ta
=125°C
Ta
=25°C
Ta
=−40°C
0.001
0.1
0.01
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB
=100/1
IC/IB
=10/1
IC/IB
=20/1
Ta
=25°C


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