2SC5716 datasheet(3/5 Pages) TOSHIBA

Part #	2SC5716

Description	TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SC5716

2001-11-27

3

Base current IB (A)

VCE – IB

Collector current IC (A)

VCE (sat) – IC

Base current IB (A)

VCE – IB

Collector current IC (A)

VCE (sat) – IC

Base current IB (A)

VCE – IB

Collector current IC (A)

VCE (sat) – IC

3

5

10

0

0.4

0.8

1.2

1.6

2.4

2

4

6

8

2

4

IC = 6 A

Common emitter

Tc

= 100°C

8

10

0.05

0.2

1

3

5

10

30

50

100

0.1

0.5

1

0.3

5

3

4

IC/IB = 2

6

Common emitter

Tc

= 100°C

4

3

5

10

0

0.4

0.8

1.2

1.6

2.4

2

4

6

8

2

IC = 6 A

Common emitter

Tc

= 25°C

2.4

5

10

0

4

3

IC = 6 A

0.4

0.8

1.2

1.6

2

4

6

8

2

Common emitter

Tc

= -25°C

10

0.05

0.2

1

3

5

10

30

50

100

0.1

0.5

1

0.3

5

3

4

IC/IB = 2

6

Common emitter

Tc

= -25°C

8

10

0.05

0.2

1

3

5

10

30

50

100

0.1

0.5

1

0.3

5

3

4

8

IC/IB = 2

6

Common emitter

Tc

= 25°C

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