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SST25VF080B-50-4C-PAE-T Datasheet(PDF) 1 Page - Microchip Technology |
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SST25VF080B-50-4C-PAE-T Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 32 page  2015 Microchip Technology Inc. DS20005045C-page 1 Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency - 50/66 MHz conditional (see Table 5-6) • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 µA (typical) • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks • Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 µs (typical) • Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations • End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode • Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device • Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register • Software Write Protection - Write protection through Block-Protection bits in status register • Temperature Range - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C • Packages Available - 8-lead SOIC (200 mils) - 8-contact WSON (6mm x 5mm) - 8-lead PDIP (300 mils) • All devices are RoHS compliant Product Description 25 series Serial Flash family features a four-wire, SPI- compatible interface that allows for a low pin-count package which occupies less board space and ulti- mately lowers total system costs. The SST25VF080B devices are enhanced with improved operating fre- quency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with pro- prietary, high-performance CMOS SuperFlash technol- ogy. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve per- formance and reliability, while lowering power con- sumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Pro- gram operation is less than alternative flash memory technologies. The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2-1 for pin assignments. SST25VF080B 8 Mbit SPI Serial Flash |
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