HP8S36 datasheet(4/19 Pages) ROHM

Part #	HP8S36

Description	30V NchNch Middle Power MOSFET

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Manufacturer	ROHM [Rohm]

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HP8S36

Datasheet

l

lGate charge characteristics (Ta = 25°C)

<Tr1>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Total gate charge

Qg*5

VDD ⋍ 15V, ID = 12A

VGS = 4.5V

-

4.8

-

nC

Gate - Source charge

Qgs*5

-

2.3

-

Gate - Drain charge

Qgd*5

-

1.1

-

<Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Total gate charge

Qg*5

VDD ⋍ 15V, ID = 32A

VGS = 4.5V

-

47

-

nC

Gate - Source charge

Qgs*5

-

19

-

Gate - Drain charge

Qgd*5

-

9.5

-

l

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

<Tr1>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Continuous forward current

IS

Ta = 25℃

-

2.5

A

Pulse forward current

ISP*2

-

48

Forward voltage

VSD*5

VGS = 0V, IS = 2.5A

-

1.2

V

Reverse recovery time

trr*5

IS = 12A, VGS = 0V

di/dt = 100A/μs

-

21.4

-

ns

Reverse recovery charge

Qrr*5

-

11.8

-

nC

<Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Continuous forward current

IS

Ta = 25℃

-

2.5

A

Pulse forward current

ISP*2

-

128

Forward voltage

VSD*5

VGS = 0V, IS = 2A

-

0.6

0.8

V

Reverse recovery time

trr*5

IS = 32A, VGS = 0V

di/dt = 100A/μs

-

32

-

ns

Reverse recovery charge

Qrr*5

-

23

-

nC

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20160515 - Rev.001

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