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ZR25D Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZR25D
Description  PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZR25D Datasheet(HTML) 2 Page - Zetex Semiconductors

  ZR25D Datasheet HTML 1Page - Zetex Semiconductors ZR25D Datasheet HTML 2Page - Zetex Semiconductors ZR25D Datasheet HTML 3Page - Zetex Semiconductors ZR25D Datasheet HTML 4Page - Zetex Semiconductors  
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ABSOLUTE MAXIMUM RATING
Reverse Current
25mA
Forward Current
25mA
Operating Temperature
-40 to 85°C
Storage Temperature
-55 to 125°C
Power Dissipation (Tamb=25°C)
SOT23
330mW
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS (Unless otherwise stated) Tamb=25°C
SYMBOL PARAMETER
CONDITIONS
LIMITS
TOL.
%
UNITS
MIN
TYP MAX
VR
Reverse Breakdown Voltage
I
R=150µA
2.475
2.45
2.425
2.5
2.5
2.5
2.525
2.55
2.575
1
2
3
V
IMIN
Minimum Operating Current
25
50
µA
IR
Recommended Operating
Current
0.05
5
mA
TC
Average Reverse Breakdown
Voltage Temp. Co.
IR(min) to
IR(max)
30
90
ppm/°C
RS §
Slope Resistance
0.4
2
ZR
Reverse Dynamic Impedance
IR = 1mA
f = 100Hz
IAC= 0.1 IR
0.3
0.8
EN
Wideband Noise Voltage
IR = 150µA
f = 100Hz to
10kHz
45
µV(rms)
ZR25D
0
Reverse Characteristics
Reverse Voltage (V)
0.2
0.6
10
20
30
40
50
60
1.0
1.8
2.6
1.4
2.2
TA
=25
°C
TA
=85
°C
TA
=-
40°C
TC =
(V
R
(max)−VR(min
)) x 1000000
VR x (T(max)−T(min))
Note: VR(max) - VR(min) is the maximum
deviation in reference voltage measured
over the full operating temperature
range.
§
RS =
VR Change(IR (min) to IR (max))
IR (max) − IR (min)
4-162


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