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TPCS8204 Datasheet(PDF) 6 Page - Toshiba Semiconductor

Part # TPCS8204
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8204 Datasheet(HTML) 6 Page - Toshiba Semiconductor

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TPCS8204
2002-02-14
6
Drain-source voltage VDS (V)
Safe operating area
Pulse width tw (S)
rth − tw
0.01
0.03
0.1
0.3
1
3
10
100
30
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
* Single pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
ID max (pulse) *
10 ms *
1 ms *
Single-device value at dual
operation
(Note 3b)
0.001
0.01
0.1
1
10
100
1000
(1)
(2)
(3)
(4)
0.1
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
Single pulse
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)


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