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PL610-01D6C Datasheet(PDF) 4 Page - Microchip Technology |
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PL610-01D6C Datasheet(HTML) 4 Page - Microchip Technology |
4 / 16 page PL610-01/-02/-03 DS20005616A-page 4 2016 Microchip Technology Inc. Output Current, Low Drive (See Figure 3-2) IOLD ±4 — — mA VOL = 0.4V, VOH = 2.4V Output Current, Standard Drive (See Figure 3-2) IOSD ±8 — — mA VOL = 0.4V, VOH = 2.4V Output Current, High Drive (See Figure 3-2) IOHD ±16 — — mA VOL = 0.4V, VOH = 2.4V TABLE 1-2: DC ELECTRICAL CHARACTERISTICS (CONTINUED) Parameters Sym. Min. Typ. Max. Units Conditions TABLE 1-3: CRYSTAL SPECIFICATIONS (10 MHZ TO 60 MHZ) Parameters Sym. Min. Typ. Max. Units Conditions Fundamental Crystal Resonator Frequency FXIN 10 — 60 MHz — Crystal Loading Rating (The IC can be programmed for any value in this range.) CL(XTAL) 8 — 12 pF — Maximum Sustainable Drive Level — — —100 µW — Operating Drive Level — — 25 — µW — Crystal Shunt Capacitance C0 — — 3 pF — Effective Series Resistance, Fundamental, (See Figure 3-4) ESR — — 50 Ω — TABLE 1-4: CRYSTAL SPECIFICATIONS (60 MHZ TO 130 MHZ) Parameters Sym. Min. Typ. Max. Units Conditions Fundamental Crystal Resonator Frequency FXIN 60 — 130 MHz — Crystal Loading Rating (The IC can be programmed for any value in this range.) CL(XTAL) 5—8 pF — Maximum Sustainable Drive Level — — —100 µW — Operating Drive Level — — 25 — µW — Crystal Shunt Capacitance C0 — — 2.5 pF — Effective Series Resistance, Fundamental, (See Figure 3-4) ESR — — 30 Ω — TABLE 1-5: PHASE NOISE SPECIFICATIONS (SEE MTC-3) Parameters Freq. @1 Hz @10 Hz @100 Hz @1 kHz @10 kHz @100 kHz @1 MHz Units Phase noise relative to carrier (typ.) 40 MHz –67 –98 –127 –142 –151 –155 –155 dBc/Hz 26 MHz –65 –96 –124 –145 –150 –155 –155 |
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