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SQM50P06-15L-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQM50P06-15L-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQM120P06-07L www.vishay.com Vishay Siliconix S12-1847-Rev. B, 30-Jul-12 1 Document Number: 67026 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES •TrenchFET® Power MOSFET • Package with Low Thermal Resistance •100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120 Configuration Single S G D P-Channel MOSFET TO-263 S D G Top View ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120P06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °Ca ID - 120 A TC = 125 °C - 98 Continuous Source Current (Diode Conduction)a IS - 120 Pulsed Drain Currentb IDM - 480 Single Pulse Avalanche Current L = 0.1 mH IAS - 80 Single Pulse Avalanche Energy EAS 320 mJ Maximum Power Dissipationb TC = 25 °C PD 375 W TC = 125 °C 125 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.40 |
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