SQM110P06-8M9L-GE3 datasheet(3/10 Pages) VISHAY

Part #	SQM110P06-8M9L-GE3

Description	Automotive P-Channel 60 V (D-S) 175 MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM120P06-07L

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Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

3

Document Number: 67026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

40

80

120

160

200

0

3

6

9

12

15

VGS =10Vthru5V

VGS =3V

VGS =4V

V

DS - Drain-to-Source Voltage (V)

0

40

80

120

160

200

0

16324864

80

ID - Drain Current (A)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

0

2500

5000

7500

10 000

12 500

15 000

0

102030

405060

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0

30

60

90

120

150

01

2

3

45

TC = 125 °C

TC = 25 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

0

0.004

0.008

0.012

0.016

0.020

0

204060

80

100

120

VGS =4.5 V

VGS =10V

I

D - Drain Current (A)

0

2

4

6

8

10

0

20

40

60

80

100 120 140 160 180 200

ID = 110 A

VDS =30V

Q

g - Total Gate Charge (nC)

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SQM110P06-8M9L-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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