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CJU50N06 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJU50N06 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 5 page  JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N06 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU 50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATION Power switching application Hard switched and high frequency circuits Uninterruptible power supply Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 50 Pulsed Drain Current IDM 220 A Single Pulsed Avalanche Energy* EAS 115 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 ℃ *EAS condition: Tj=25 ℃,VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C TO-252-2L 1. GATE 2. DRAIN 3. SOURCE www.cj-elec.com 1 A- 3,Jan,2016 |
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