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STP11N60DM2 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STP11N60DM2
Description  N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STP11N60DM2 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STP11N60DM2
Electrical characteristics
DocID029388 Rev 1
5/12
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain
current
-
10
A
ISDM(2)
Source-drain
current (pulsed)
-
40
A
VSD(3)
Forward on voltage
VGS = 0 V, ISD = 10 A
-
1.6
V
trr
Reverse recovery
time
ISD = 10 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "Test
circuit for inductive load switching
and diode recovery times")
-
90
ns
Qrr
Reverse recovery
charge
-
248
µC
IRRM
Reverse recovery
current
-
5.5
A
trr
Reverse recovery
time
ISD = 10 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
-
160
ns
Qrr
Reverse recovery
charge
-
664
nC
IRRM
Reverse recovery
current
-
8.3
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 µA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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