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STP11N60DM2 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STP11N60DM2
Description  N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STP11N60DM2 Datasheet(HTML) 3 Page - STMicroelectronics

 
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STP11N60DM2
Electrical ratings
DocID029388 Rev 1
3/12
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
10
A
Drain current (continuous) at Tcase = 100 °C
6.3
IDM(1)
Drain current (pulsed)
40
A
PTOT
Total dissipation at Tcase = 25 °C
110
W
dv/dt(2)
Peak diode recovery voltage slope
40
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V
(3) VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.14
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR(1)
Avalanche current, repetitive or not repetitive
2.5
A
EAS(2)
Single pulse avalanche energy
250
mJ
Notes:
(1) pulse width limited by Tjmax
(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.


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