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IRLL024N Datasheet(PDF) 2 Page - International Rectifier

Part No. IRLL024N
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLL024N Datasheet(HTML) 2 Page - International Rectifier

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IRLL024N
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.048 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.065
VGS = 10V, ID = 3.1A
„
–––
––– 0.080
VGS = 5.0V, ID = 2.5A
„
–––
––– 0.100
VGS = 4.0V, ID = 1.6A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
3.3
–––
–––
S
VDS = 25V, ID = 1.9 A
–––
–––
25
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
10.4 15.6
ID = 1.9A
Qgs
Gate-to-Source Charge
–––
1.5
2.3
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.5
8.3
VGS = 5.0V, See Fig. 6 and 9
„
td(on)
Turn-On Delay Time
–––
7.4
–––
VDD = 28V
tr
Rise Time
–––
21
–––
ns
ID = 1.9A
td(off)
Turn-Off Delay Time
–––
18
–––
RG = 24 Ω
tf
Fall Time
–––
25
–––
RD = 15 Ω, See Fig. 10
„
Ciss
Input Capacitance
–––
510
–––
VGS = 0V
Coss
Output Capacitance
–––
140
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
58
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 1.9A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 25 mH
RG = 25Ω, IAS = 3.1A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 1.9A, VGS = 0V
„
trr
Reverse Recovery Time
–––
39
58
ns
TJ = 25°C, IF = 1.9A
Qrr
Reverse RecoveryCharge
–––
63
94
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
12
3.1
A


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