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FERD40H100STS Datasheet(PDF) 2 Page - STMicroelectronics

Part No. FERD40H100STS
Description  100 V field-effect rectifier diode
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD40H100STS Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD40H100S
2/12
DocID029155 Rev 1
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, with anode
terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current δ = 0.5, square wave
TC = 145 °C
40
A
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
440
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature (1)
+175
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal resistance parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
0.8
°C/W
Table 4: Static electrical characteristics with anode terminals short circuited
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
190
µA
Tj = 125 °C
-
12
24
mA
Tj = 125 °C
VR = 70 V
-
6
12
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 4 A
-
0.380
0.430
V
Tj = 125 °C
-
0.325
0.375
Tj = 25 °C
IF = 10 A
-
0.465
0.525
Tj = 125 °C
-
0.455
0.510
Tj = 25 °C
IF = 20 A
-
0.600
0.675
Tj = 125 °C
-
0.550
0.600
Tj = 125 °C
IF = 40 A
-
0.645
0.705
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.420 x IF(AV) + 0.009 IF2(RMS)


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